TYPE | DESCRIPTION |
---|
Case/Package | SOT-23 |
Polarity | NPN |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 2.5A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.)
Toshiba
5 Pages / 0.14 MByte
Toshiba
5 Pages / 0.13 MByte
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