| TYPE | DESCRIPTION |
|---|
| Case/Package | ES-6 |
| Polarity | N+P |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 0.5A/0.33A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type ○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V) Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) • Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V)
Toshiba
9 Pages / 0.21 MByte
Toshiba
Trans MOSFET N/P-CH 20V 0.5A/0.33A 6Pin SOT-563
Toshiba
Trans MOSFET N/P-CH 20V 0.5A/0.33A 6Pin ES T/R
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