| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 330 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 15 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 8A |
| hFE Min | 200 @500mA, 2V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
The 2SC5707-E is a NPN Bipolar Transistor for high-current switching application.
● Adoption of FBET and MBIT Process
● Large Current Capacitance
● High Speed Switching
● High Allowable Power Dissipation
● Low Collector-to-emitter Saturation Voltage
ON Semiconductor
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TRANSISTOR, NPN TO-251; Transistor Type: Bipolar; Transistor Polarity: NPN; Collector-to-Emitter Breakdown Voltage: 5...
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DPAK/TP-FA IPAK/TP NPN 50V 8A
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ON Semiconductor
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