| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Polarity | NPN |
| Power Dissipation | 80000 mW |
| Breakdown Voltage (Collector to Emitter) | 450 V |
| Continuous Collector Current | 5A |
| hFE Min | 4 @7A, 10V |
| Input Power (Max) | 34 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.3 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. The devices are designed for use in electronic transformer for halogen lamps.
●Features
●■ High voltage capability
●■ Low spread of dynamic parameters
●■ Minimum lot-to-lot spread for reliable operation
●■ Very high switching speed
●■ High ruggedness
●Applications
●■ Electronic transformers for halogen lamps
●■ Flyback and forward single transistor low power converters
ST Microelectronics
15 Pages / 0.42 MByte
Semelab
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
ST Microelectronics
High Voltage Fast-switching NPN Power Transistors
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