| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-23 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 4A |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed switching: tf = 25 ns (typ.)
Toshiba
5 Pages / 0.16 MByte
Toshiba
5 Pages / 0.16 MByte
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