| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 150 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-243 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 2A |
| hFE Min | 100 @100mA, 2V |
| hFE Max | 400 |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.5 mm |
| Size-Width | 2.5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | 150℃ (TJ) |
If you require a general purpose BJT that can handle high voltages, then the NPN 2SD1623T-TD-E BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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