| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | S-Mini |
| Power Dissipation | 150 mW |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Height | 1.1 mm |
This 2SJ106-GR(TE85L,F) JFET from Toshiba can be used as an electrical switch, amplifier, or voltage-controlled resistor by utilizing a diode-like structure. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This junction field effect transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C. It is made in a single configuration.
Toshiba
4 Pages / 0.28 MByte
Toshiba
Trans JFET P-CH Si 3Pin S-Mini T/R
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