TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | S-Mini |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 150 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Material | Silicon |
Audio Frequency Low Noise Amplifier Applications
●• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
●• High breakdown voltage: VGDS = −50 V
●• Low noise: NF = 1.0dB (typ.)
● at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ
●• High input impedance: IGSS = −1 nA (max) at VGS = −30 V
●• Small package
Toshiba
4 Pages / 0.53 MByte
Toshiba
4 Pages / 0.28 MByte
Toshiba
Trans JFET N-CH 6.5mA 3Pin S-Mini T/R
Toshiba
Trans JFET N-CH 3mA Si 3Pin S-Mini T/R
Toshiba
JFET N-Ch 10mA -50V FET 150mW Audio LNA
Toshiba
Silicon N Channel Junction Type Field Effect Transistor
ROHM Semiconductor
Transistors > MOS FET > Power MOS FETA
ROHM Semiconductor
MOSFET N-CH 60V 10A TO-220FN
Toshiba
Silicon N Channel Junction Type Field Effect Transistor
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.