TYPE | DESCRIPTION |
---|
Case/Package | PW-MINI |
Polarity | N-CH |
Drain to Source Voltage (Vds) | 500 V |
Continuous Drain Current (Ids) | 0.5A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator and DC-DC Converter Applications Features Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Toshiba
3 Pages / 0.09 MByte
Toshiba
3 Pages / 0.14 MByte
Toshiba
3 Pages / 0.09 MByte
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