TPC6201 Datasheet PDF - Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) HDD Motor Drive Applications Notebook PC Applications Portable Equipment Applications

● Low drain-source ON resistance: RDS (ON) = 80 mΩ (typ.)

● High forward transfer admittance: |Yfs| = 3.8 S (typ.)

● Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)

● Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)