| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Input Capacitance (Ciss) | 2200pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Bulk |
| Size-Length | 15.9 mm |
| Size-Width | 4.8 mm |
| Size-Height | 19 mm |
The 2SK3878(F) is a 900V N-channel silicon Field Effect Transistor designed for switching regulator applications.
● Low drain-source ON resistance
● High forward transfer admittance
● Low leakage current
● Enhancement mode
● 900V Drain to gate voltage
● ±30V Gate to source voltage
● 0.833°C/W Thermal resistance, junction to case
● 50°C/W Thermal resistance, junction to ambient
Toshiba
6 Pages / 0.22 MByte
Toshiba
6 Pages / 0.21 MByte
Toshiba
Power MOSFET, N Channel, 9A, 900V, 1.3Ω, 10V, 4V
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