| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 150 W |
| Gain Bandwidth Product | 30 MHz |
| Breakdown Voltage (Collector to Emitter) | 230 V |
| Continuous Collector Current | 15A |
| hFE Min | 80 @1A, 5V |
| Input Power (Max) | 150 W |
| DC Current Gain (hFE) | 80 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 20.2 mm |
| Size-Width | 5.2 mm |
| Size-Height | 26.4 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
●Features
●■ High breakdown voltage VCEO > -230V
●■ Complementary to 2STC5200
●■ Fast-switching speed
●■ Typical fT = 30 MHz
●Application
●■ Audio power amplifier
ST Microelectronics
9 Pages / 0.17 MByte
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