| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 20 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Polarity | NPN |
| Power Dissipation | 80000 mW |
| Gain Bandwidth Product | 20 MHz |
| Breakdown Voltage (Collector to Emitter) | 120 V |
| Continuous Collector Current | 8A |
| hFE Min | 70 @3A, 4V |
| hFE Max | 70 |
| Input Power (Max) | 80 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 80000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 15.1 mm |
| Operating Temperature | 150℃ (TJ) |
STMicroelectronics has the solution to your circuit"s high-voltage requirements with their NPN 2STC4467 general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
ST Microelectronics
8 Pages / 0.14 MByte
ST Microelectronics
3 Pages / 0.06 MByte
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