| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.36 Ω |
| Polarity | N-Channel |
| Power Dissipation | 83 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 550 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 890pF @100V(Vds) |
| Input Power (Max) | 83 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 83W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IPD50R399CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.
● Lowest figure of merit Ron x Qg
● Extreme dV/dt rate
● Ultra low RDS (ON), very fast switching
● Very low internal Rg
● High peak current capability
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
● Qualified according to JEDEC for target applications
● Green device
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