| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 130 W |
| Gain Bandwidth Product | 30 MHz |
| Breakdown Voltage (Collector to Emitter) | 230 V |
| Continuous Collector Current | 15A |
| hFE Min | 80 @1A, 5V |
| Input Power (Max) | 150 W |
| DC Current Gain (hFE) | 80 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 130 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.7 mm |
| Operating Temperature | 150℃ (TJ) |
The 2STC5242 is a 230V High Power NPN Epitaxial Planar Bipolar Transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The transistor shows good gain linearity behaviour. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● High breakdown voltage
● Complementary to the 2STA1962
● Fast-switching speed
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
9 Pages / 0.17 MByte
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