TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 130 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 80.0 V |
Current Rating | 3.00 A |
Case/Package | TO-261-4 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1.6 W |
Gain Bandwidth Product | 130 MHz |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 3A |
hFE Min | 160 @1A, 2V |
Input Power (Max) | 1.6 W |
DC Current Gain (hFE) | 280 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1600 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 3.5 mm |
Size-Height | 1.8 mm |
Operating Temperature | -65℃ ~ 150℃ |
The 2STN1360 is a NPN fast-switching Power Transistor manufactured using new low voltage Planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.
● Very low collector-emitter saturation voltage
● High current gain characteristic
● Fast-switching speed
● PNP complement is 2STN2360
ST Microelectronics
16 Pages / 0.42 MByte
ST Microelectronics
4 Pages / 0.21 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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