TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 10.0 A |
Case/Package | TO-263-3 |
Number of Positions | 3 Position |
Polarity | N-Channel |
Power Dissipation | 60 W |
Input Capacitance | 380 pF |
Gate Charge | 19.0 nC |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 10.0 A |
Rise Time | 6.00 ns |
Breakdown Voltage (Collector to Emitter) | 600 V |
Thermal Resistance | 62.5 ℃/W |
Reverse recovery time | 22 ns |
Input Power (Max) | 65 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 65 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10.4 mm |
Size-Width | 9.35 mm |
Size-Height | 4.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGB10NC60KDT4 is a short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
● Low on-voltage drop (VCE(sat))
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery anti-parallel diode
● 10µs Short-circuit withstand time
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