| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 1A |
| hFE Min | 180 @500mA, 2V |
| hFE Max | 180 @0.5A, 2V |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.6 mm |
| Size-Height | 1.3 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The 2STR1160 is a NPN fast-switching Power Transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
● Very low collector-emitter saturation voltage
● High current gain characteristic
● Fast switching speed
● Surface-mount device in medium power package
● PNP complementary to 2STR2160
ST Microelectronics
9 Pages / 0.36 MByte
ST Microelectronics
10 Pages / 0.44 MByte
ST Microelectronics
5 Pages / 0.04 MByte
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