The ADRF5130BCPZ is a high power, 44W peak, 0.7GHz to 3.5GHz silicon SPDT reflective switch in 24 pin LFCSP package. The switch is ideal for high power and cellular infrastructure applications like long term evolution (LTE) base stations. The ADRF5130 has high power handling of 43dBm (maximum), a low insertion loss of 0.6dB, input third order intercept of 68dBm (typical) and 0.1dB compression (P0.1dB) of 46dBm. On-chip circuitry operates at a single, positive supply voltage of 5V and typical supply current of 1.06mA, making the ADRF5130 an ideal alternative to pin diode based switches. It has 2KV, class 2 human body model and 1.25KV charged device model (CDM) ESD protection. It is typically used in cellular/4G infrastructure, wireless infrastructure, military and high reliability applications, test equipments and pin diode replacement applications.
● Reflective 50 ohm design
● Low insertion loss of 0.6dB typical to 2GHz
● High isolation of 50dB typical to 2GHz
● High power handling and high linearity
● RF input power of 43dBm maximum operating (continuous wave (CW) at TCASE = 85°C)
● 0.1dB compression (P0.1dB) of 46dBm typical
● Input third order intercept (IP3) of 68dBm typical to 2GHz
● Supply current of 1.06mA and bias voltage range from 4.5V to 5.4V
● Positive control, TTL-compatible (VCTL = 0V or VDD)
● Operating temperature range from -40°C to +105°C
●ESD sensitive device. Proper ESD precautions should be taken to avoid performance degradation and loss of functionality.
