| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 1 MHz |
| Number of Pins | 16 Pin |
| Supply Voltage (DC) | 4.50V (min) |
| Case/Package | SOIC-16 |
| Rise/Fall Time | 15ns (Max) |
| Number of Outputs | 2 Output |
| Supply Current | 350 mA |
| Number of Channels | 2 Channel |
| Number of Positions | 16 Position |
| Power Dissipation | 275 mW |
| Rise Time | 15 ns |
| Isolation Voltage | 3750 Vrms |
| Input Current (Min) | 3 mA |
| Maximum Forward Voltage (Max) | 5.5 V |
| Fall Time | 15 ns |
| Fall Time (Max) | 15 ns |
| Fall Time (Max) | 15 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 4.5V ~ 5.5V |
| Supply Voltage (Max) | 5.5 V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.5 mm |
| Size-Width | 7.6 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The ADUM6132ARWZ is an isolated half-bridge Gate Driver that employs the Analog Devices, Inc., iCoupler® technology to provide an isolated high-side driver with an integrated 275mW high-side supply. This supply, provided by an internal isolated DC-to-DC converter, powers not only the driver high-side output but also any external buffer circuitry that is commonly used with the driver. This functionality eliminates the cost, space and performance issues associated with external supply configurations such as a bootstrap circuit. The architecture of the driver isolates the high-side channel and the high-side power from the control and low-side interface circuitry. Care has been taken to ensure close matching between the high-side and low-side driver timing characteristics to reduce the need for a dead time margin. In comparison to gate drivers that employ high voltage level translation methodologies, the driver offers the benefit of true, galvanic isolation.
● isoPower Integrated isolated high-side supply
● 275mW Isolated DC-to-DC converter
● 200mA Output sink current
● 200mA Output source current
● >50kV/µs High common-mode transient immunity
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