TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 1.28 W |
Polarity | N+P |
Power Dissipation | 2 W |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 4.5A/3.2A |
Rise Time | 2.3 ns |
Input Capacitance (Ciss) | 540pF @30V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 1.9 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
●Features
●n-channel p-channel
●VDS(V) = 60V -60V
●ID= 4.5A (VGS=10V) -3.2A (VGS= -10V)
●RDS(ON) RDS(ON)
●< 56mΩ(VGS=10V) < 105mΩ(VGS= -10V)
●< 77mΩ(VGS=4.5V) < 135mΩ(VGS= -4.5V)
●100% Rg tested
Alpha & Omega Semiconductor
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