| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 30000 mW |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 263 ns |
| Input Power (Max) | 30 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 30000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 650V 20A 30W Through Hole TO-220
Alpha & Omega Semiconductor
9 Pages / 0.52 MByte
Alpha & Omega Semiconductor
1 Pages / 0.04 MByte
Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 20A 30000mW 3Pin(3+Tab) TO-220F Tube
Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 20A 30000mW 3Pin(3+Tab) TO-220F Tube
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