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AOTF10B65M2
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AOTF10B65M2 Datasheet PDF - Alpha & Omega Semiconductor

Manufacturer:Alpha & Omega Semiconductor
Category:IGBTs
Case Package:TO-220-3
Description:Trans IGBT Chip N-CH 650V 20A 30000mW 3Pin(3+Tab) TO-220F Tube
Documentation:AOTF10B65M2 Datasheet (6 Pages)
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AOTF10B65M2 Datasheet PDF (6 Pages)
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AOTF10B65M2 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
Power Rating30 W
Power Dissipation30000 mW
Breakdown Voltage (Collector to Emitter)650 V
Reverse recovery time262 ns
Input Power (Max)30 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)30000 mW
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AOTF10B65M2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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AOTF10B65M2 Documents

AOTF10B65M2 Datasheet
Alpha & Omega Semiconductor
6 Pages / 0.41 MByte
AOTF10B65M2 Other Datasheet PDF
Alpha & Omega Semiconductor
9 Pages / 0.52 MByte
AOTF10B65M2 Drawing Diagrams
Alpha & Omega Semiconductor
1 Pages / 0.04 MByte

AOTF10B65 Documents

AOTF10B65M1 Datasheet PDF
Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 20A 30000mW 3Pin(3+Tab) TO-220F Tube
AOTF10B65M2 Datasheet PDF
Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 20A 30000mW 3Pin(3+Tab) TO-220F Tube
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