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APT100GN60LDQ4G
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APT100GN60LDQ4G Datasheet PDF - Microsemi

Manufacturer:Microsemi
Category:IGBTs
Case Package:TO-264-3
Description:Trans IGBT Chip N-CH 600V 229A 625000mW 3Pin(3+Tab) TO-264
Documentation:APT100GN60LDQ4G Datasheet (9 Pages)Package Outline Dimension on9 Page
APT100GN60LDQ4G User Reference Manual Guide (12 Pages)
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APT100GN60LDQ4G Datasheet PDF (9 Pages)
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APT100GN60LDQ4G Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)600 V
Current Rating100 A
Case/PackageTO-264-3
Power Dissipation625 W
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)625 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)625000 mW
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APT100GN60LDQ4G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length26.49 mm
Size-Width20.5 mm
Size-Height5.21 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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APT100GN60LDQ4G Documents

APT100GN60LDQ4G Datasheet
Microsemi
9 Pages / 0.42 MByte
APT100GN60LDQ4G User Reference Manual Guide
Microsemi
12 Pages / 1.03 MByte
APT100GN60LDQ4G Other Datasheet PDF
Microsemi
9 Pages / 0.45 MByte
APT100GN60LDQ4G Product Catalog
Microsemi
40 Pages / 4.07 MByte

APT100GN60LDQ4 Documents

APT100GN60LDQ4G Datasheet PDF
Microsemi
Trans IGBT Chip N-CH 600V 229A 625000mW 3Pin(3+Tab) TO-264
APT100GN60LDQ4G Datasheet PDF
Microchip
IGBT 600V 229A 625W TO264
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