| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227 |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 7.2nF @25V |
| Input Power (Max) | 480 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 480000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this APT100GT120JU2 IGBT transistor from Microsemi. Its maximum power dissipation is 0.4 mW. It has a maximum collector emitter voltage of ±20 V. It is made in a single configuration. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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