| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 225 A |
| Case/Package | SOT-227 |
| Power Dissipation | 700 W |
| Input Capacitance | 21.6 nF |
| Gate Charge | 1.05 µC |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 225 A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 18000pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
As an alternative to traditional transistors, the APT10M07JVFR power MOSFET from Microsemi can be used to both amplify and switch electronic signals. Its maximum power dissipation is 700000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes power mos v technology. This N channel MOSFET transistor operates in enhancement mode.
Microsemi
4 Pages / 0.12 MByte
Microsemi
5 Pages / 0.23 MByte
Microsemi
Trans MOSFET N-CH 100V 225A 4Pin SOT-227
Microchip
MOSFET N-CH 100V 225A SOT-227
Advanced Power Technology
POWER MOS V 100V 225A 0.007Ω
Advanced Power Technology
Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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