| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | DirectFET-MZ |
| Power Rating | 89 W |
| Number of Channels | 1 Channel |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 47 mΩ |
| Polarity | N-CH |
| Power Dissipation | 89 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 4.9A |
| Rise Time | 7.8 ns |
| Input Capacitance (Ciss) | 1411pF @25V(Vds) |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 40 ℃ |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.35 mm |
| Size-Width | 5.05 mm |
| Size-Height | 0.7 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Infineon
10 Pages / 0.23 MByte
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270 Pages / 11.59 MByte
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44 Pages / 3.69 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.19 MByte
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Direct-FET N-CH 150V 4.9A
International Rectifier
Trans MOSFET N-CH 150V 4.9A 7Pin Direct-FET MZ T/R
International Rectifier
Trans MOSFET N-CH 150V 4.9A 7Pin Direct-FET MZ T/R
Infineon
Direct-FET N-CH 150V 4.9A
Infineon
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 28 amperes optimized with low on resistance.
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