| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Power Dissipation | 625 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 9.5nF @25V |
| Input Power (Max) | 625 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 38.2 mm |
| Size-Width | 25.4 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You can use this APT150GN120JDQ4 IGBT transistor from Microsemi as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.
Microsemi
9 Pages / 0.2 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
9 Pages / 0.19 MByte
Microsemi
Trans IGBT Chip N-CH 1200V 215A 625000mW 4Pin SOT-227
Microsemi
Trans IGBT Chip N-CH 1200V 215A 625000mW 4Pin SOT-227
Microchip
IGBT MOD 1200V 215A 625W ISOTOP
Microchip
IGBT MOD 1200V 215A 625W ISOTOP
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