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APT200GN60B2G
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APT200GN60B2G Datasheet PDF - Microsemi

Manufacturer:Microsemi
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 283A 682000mW 3Pin(3+Tab) T-MAX
Documentation:APT200GN60B2G Datasheet (6 Pages)Package Outline Dimension on6 Page
APT200GN60B2G User Reference Manual Guide (12 Pages)
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APT200GN60B2G Datasheet PDF (6 Pages)
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APT200GN60B2G Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation682000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)682 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)682000 mW
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APT200GN60B2G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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APT200GN60B2G Documents

APT200GN60B2G Datasheet
Microsemi
6 Pages / 0.16 MByte
APT200GN60B2G User Reference Manual Guide
Microsemi
12 Pages / 1.03 MByte
APT200GN60B2G Other Datasheet PDF
Microsemi
44 Pages / 2.7 MByte
APT200GN60B2G Product Catalog
Microsemi
40 Pages / 4.07 MByte

APT200GN60B2 Documents

APT200GN60B2G Datasheet PDF
Microsemi
Trans IGBT Chip N-CH 600V 283A 682000mW 3Pin(3+Tab) T-MAX
APT200GN60B2G Datasheet PDF
Microchip
IGBT 600V 283A 682W TO247
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