TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 33.0 A |
Case/Package | TO-247-3 |
Power Dissipation | 297 W |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Power (Max) | 297 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 297000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 21.46 mm |
Size-Width | 16.26 mm |
Size-Height | 5.31 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use the APT33GF120BRG IGBT transistor from Microsemi as an electronic switch. Its maximum power dissipation is 297000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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