| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 24.0 A |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.39 Ω |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 5.5 V |
| Drain to Source Voltage (Vds) | 1 kV |
| Breakdown Voltage (Drain to Source) | 1000 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 35 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 8700pF @25V(Vds) |
| Input Power (Max) | 568 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 568000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Weight | 40.0 g |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN24N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● miniBLOC with aluminium nitride isolation
● UL94V-0 Flammability rating
● Low RDS (ON) HDMOS™ process
● Rugged polysilicon gate cell structure
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
6 Pages / 0.12 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN24N100 Power MOSFET, N Channel, 24A, 1kV, 390mohm, 10V, 5.5V
IXYS Semiconductor
Trans MOSFET N-CH 1kV 24A 4Pin SOT-227B
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