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APT50GS60BRDQ2G
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APT50GS60BRDQ2G Datasheet PDF - Microsemi

Manufacturer:Microsemi
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 93A 415000mW 3Pin(3+Tab) TO-247
Documentation:APT50GS60BRDQ2G Datasheet (9 Pages)Package Outline Dimension on9 Page
APT50GS60BRDQ2G User Reference Manual Guide (12 Pages)
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APT50GS60BRDQ2G Datasheet PDF (9 Pages)
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APT50GS60BRDQ2G Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation415000 mW
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time25 ns
Input Power (Max)415 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)415000 mW
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APT50GS60BRDQ2G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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APT50GS60BRDQ2G Documents

APT50GS60BRDQ2G Datasheet
Microsemi
9 Pages / 0.32 MByte
APT50GS60BRDQ2G User Reference Manual Guide
Microsemi
12 Pages / 1.03 MByte
APT50GS60BRDQ2G Other Datasheet PDF
Microsemi
6 Pages / 0.13 MByte
APT50GS60BRDQ2G Product Catalog
Microsemi
40 Pages / 4.07 MByte

APT50GS60BRDQ2 Documents

APT50GS60BRDQ2G Datasheet PDF
Microsemi
Trans IGBT Chip N-CH 600V 93A 415000mW 3Pin(3+Tab) TO-247
APT50GS60BRDQ2G Datasheet PDF
Microchip
IGBT 600V 93A 415W TO247
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