| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.27 Ω |
| Polarity | N-Channel |
| Power Dissipation | 104 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 550 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 1190pF @100V(Vds) |
| Input Power (Max) | 104 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 104 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IPP50R299CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.
● Extreme dV/dt rate
● Ultra low RDS (ON), very fast switching
● Very low internal Rg
● High peak current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
● Qualified according to JEDEC for target applications
● Green device
Infineon
10 Pages / 0.53 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
33 Pages / 1.03 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
10 Pages / 0.27 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
