| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 57.0 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 570 W |
| Input Capacitance | 5.59 nF |
| Gate Charge | 125 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 57.0 A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 5590pF @25V(Vds) |
| Input Power (Max) | 570 W |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 570W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use Microsemi"s APT50M75B2LLG power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 570000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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