| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 7.26nF @25V |
| Input Power (Max) | 543 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This APT70GR120JD60 infineon IGBT module from Microsemi is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 543000 mW. It is made in a single configuration. This IGBT driver board has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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