| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 77.0 A |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 30 mΩ |
| Polarity | N-CH |
| Power Dissipation | 568 W |
| Threshold Voltage | 2.1 V |
| Input Capacitance | 13.6 nF |
| Gate Charge | 640 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 77.0 A |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 13600pF @25V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 568W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 25.4 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
As an alternative to traditional transistors, the APT77N60JC3 power MOSFET from Microsemi can be used to both amplify and switch electronic signals. Its maximum power dissipation is 568000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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