| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 31.0 A |
| Case/Package | TO-264-3 |
| Polarity | N-CH |
| Power Dissipation | 565W (Tc) |
| Input Capacitance | 4.67 nF |
| Gate Charge | 160 nC |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 31.0 A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 4670pF @25V(Vds) |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 565W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Microsemi
5 Pages / 0.24 MByte
Microsemi
5 Pages / 0.23 MByte
Microsemi
Trans MOSFET N-CH 800V 29A 4Pin SOT-227
APT
MOSFET N-CH 800V 31A TO-264
Microchip
MOSFET N-CH 800V 31A TO-264
Microchip
MOSFET N-CH 800V 29A SOT-227
Advanced Crystal Technology
Power Generation High Voltage N-channel Enhancement Mode Power Mosfets.
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