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APTGT600U170D4G
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APTGT600U170D4G Datasheet PDF - Microsemi

Manufacturer:Microsemi
Category:IGBTs
Case Package:D-4
Description:Trans IGBT Module N-CH 1700V 1.1kA 2900000mW 4Pin Case D-4
Documentation:APTGT600U170D4G Datasheet (1 Pages)
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APTGT600U170D4G Datasheet PDF (1 Pages)
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APTGT600U170D4G Specifications

TYPEDESCRIPTION
Mounting StyleChassis
Number of Pins4 Pin
Case/PackageD-4
Power Dissipation2.9 kW
Breakdown Voltage (Collector to Emitter)1700 V
Input Capacitance (Cies)51nF @25V
Input Power (Max)2900 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)2900000 mW
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APTGT600U170D4G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingBox
Operating Temperature-40℃ ~ 150℃ (TJ)
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APTGT600U170D4G Documents

APTGT600U170D4G Datasheet
Microsemi
1 Pages / 0.25 MByte
APTGT600U170D4G Other Datasheet PDF
Microsemi
6 Pages / 0.58 MByte
APTGT600U170D4G Product Catalog
Microsemi
40 Pages / 4.07 MByte

APTGT600U170D4 Documents

APTGT600U170D4G Datasheet PDF
Microsemi
Trans IGBT Module N-CH 1700V 1.1kA 2900000mW 4Pin Case D-4
APTGT600U170D4G Datasheet PDF
Microchip
IGBT MODULE 1700V 1100A 2900W D4
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