| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 5 Pin |
| Case/Package | SP-6 |
| Power Dissipation | 1250 W |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 64 ns |
| Input Capacitance (Ciss) | 28900pF @25V(Vds) |
| Fall Time | 116 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1250W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Compared to traditional transistors, APTM20SKM04G power MOSFETs, developed by Microsemi, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250000 mW. This MOSFET transistor has an operating temperature range of -40 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Microsemi
1 Pages / 0.25 MByte
Microsemi
7 Pages / 0.45 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans MOSFET N-CH 200V 372A 5Pin Case SP-6
Microchip
MOSFET N-CH 200V 372A SP6
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