| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 160 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.014 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 59A |
| Rise Time | 77 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Fall Time | 56 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRF3710Z is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Fully avalanche rating
● Repetitive avalanche allowed up to Tjmax
Infineon
14 Pages / 0.34 MByte
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