| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.02 Ω |
| Polarity | P-CH |
| Power Dissipation | 200 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 74A |
| Rise Time | 99 ns |
| Input Capacitance (Ciss) | 3400pF @25V(Vds) |
| Fall Time | 96 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRF4905 is a -55V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. The automotive MOSFET offers benchmark figure of merit performance and their design optimized to address key applications such as electric power steering, injection, micro hybrid and HEV.
● 175°C Operating temperature
● Repetitive avalanche allowed up to Tjmax
● Dynamic dV/dt rating
● Automotive qualified
●ESD sensitive device, take proper precaution while handling the device.
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