| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Rise Time | 52.0 ns |
| Breakdown Voltage (Collector to Emitter) | 900 V |
| Reverse recovery time | 90 ns |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PF50WDPBF is a 900V Warp 20 to 100kHz copack IGBT with ultrafast soft recovery diode designed for switch mode power supply, welding and PFC applications. Latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. Low conduction losses and minimal minority carrier recombination makes as an excellent option for resonant mode switching (up to >100kHz). HEXFRED diodes optimized for performance and used in bridge configurations.
● 50% Reduction of Eoff parameter
● Lower switching losses allow more effective operation in replacing large die MOSFET up to 100kHz
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