| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.043 Ω |
| Polarity | N+P |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 4.7A/3.4A |
| Input Capacitance (Ciss) | 740pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The AUIRF7343Q is a dual N/P-channel MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this MOSFET is 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in wide variety of applications. The efficient package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface-mount can dramatically reduce board space.
● Advanced planar technology
● Ultra low ON-resistance
● Logic level gate drive
● Surface-mount device
Infineon
11 Pages / 0.31 MByte
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1 Pages / 0.06 MByte
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35 Pages / 2.04 MByte
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2 Pages / 0.07 MByte
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A Automotive 8Pin SOIC Tube
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A Automotive 8Pin SOIC T/R
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