TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 139 W |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 279 ns |
Input Power (Max) | 139 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 139 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
• 75% lower Eoff compared to previous generation combined with low conduction losses
●• Short circuit withstand time – 10 µs
●• Designed for:
● - Motor controls
● - Inverter
●• NPT-Technology for 600V applications offers:
● - very tight parameter distribution
● - high ruggedness, temperature stable behaviour
● - parallel switching capability
●• Very soft, fast recovery anti-parallel EmCon diode
Infineon
15 Pages / 0.65 MByte
Infineon
15 Pages / 0.36 MByte
Infineon
Trans IGBT Chip N-CH 600V 31A 139000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 31A 139000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 31A 3Pin(3+Tab) TO-220AB
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