| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 230 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0016 Ω |
| Polarity | N-Channel |
| Power Dissipation | 230 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 250A |
| Rise Time | 70 ns |
| Input Capacitance (Ciss) | 7330pF @25V(Vds) |
| Fall Time | 53 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 230W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 3.43 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRFB8407 is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Advanced process technology
● New ultra-low ON-resistance
● Repetitive avalanche allowed up to Tjmax
Infineon
15 Pages / 0.33 MByte
Infineon
28 Pages / 4.06 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
35 Pages / 2.04 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
