| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.07 Ω |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 33A |
| Rise Time | 24 ns |
| Input Capacitance (Ciss) | 4650pF @100V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 10.75 mm |
| Size-Width | 10.4 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | 150℃ (TJ) |
The STB42N65M5 is a MDmesh™ N-channel Power MOSFET offers excellent switching performance. The MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon-based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiencies.
● TO-220 worldwide best RDS (ON)
● Higher VDSS rating
● High dV/dt capability
● Easy to drive
● 100% Avalanche tested
ST Microelectronics
18 Pages / 1.06 MByte
ST Microelectronics
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ST Microelectronics
10 Pages / 0.75 MByte
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