| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 99 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0024 Ω |
| Polarity | N-CH |
| Power Dissipation | 99 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 127A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 3171pF @25V(Vds) |
| Fall Time | 23 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 99W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRFR8403 is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device. It is suitable for electric power steering, glow plug, relay replacement, window lifter, start/stop micro hybrid and heavy loads.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
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