| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 217 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The AUIRG4PH50S is an Insulated Gate Bipolar Transistor for use with PTC heater. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency. It is optimized for minimum saturation voltage and low operating frequencies (<1kHz).
● Low collector-to-emitter voltage
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