| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-274-3 |
| Power Rating | 595 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 595 W |
| Rise Time | 25.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 595 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 595000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.6 mm |
| Size-Width | 5 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRGPS40B120UPBF is an Insulated Gate Bipolar Transistor features non-punch through IGBT technology and excellent current sharing in parallel operation.
● Square RBSOA
● Positive VCE (on) temperature coefficient
● Rugged transient performance
● Low EMI
● Significantly less snubber required
● 10µs Short-circuit capability
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INSULATED GATE BIPOLAR TRANSISTOR
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