| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 600 mW |
| DC Current Gain (hFE) | 800 |
| Operating Temperature (Max) | 200 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
The BC109C from Multicomp are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.
● Collector emitter voltage (Vce) of 25V
● Continuous collector current (Ic) of 200mA
● Power dissipation of 600mW
● Operating junction temperature range from -65°C to 200°C
● Collector emitter saturation voltage of 600mV at Ic=100mA
● DC current gain of 40 at Ic=10µA
Multicomp
4 Pages / 0.14 MByte
Multicomp
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